ITHAQUE, NY, June 15, 2021 / PRNewswire / – Odyssey Semiconductor Technologies, Inc. (“Odyssey”, “Odyssey Semiconductor” or “the Company”), a semiconductor device company that develops innovative high voltage power switching components based on proprietary gallium nitride (GaN) processing technology, has announced today the arrival of the professor Khurram Afridi to the Board of Directors of the Company.

Afridi is associate professor of electrical and computer engineering at Cornell University where he conducts extensive research on power electronics and energy systems incorporating electronic power controls. Professor Afridi’s team of engineers at Cornell University has studied many applications of GaN devices, including the concept of on-the-go charging for electrical transportation.

“Professor Afridi is one of the country’s top power electronics experts,” said Alex behfar, Chairman and CEO of Odyssey Semiconductor. “Customers of our GaN-based vertical conduction devices are focused on delivering smaller, lighter, and more efficient power electronics systems. As a member of our advisory board, Professor Afridi will help our team focus on specific device configurations for customers of electrical system applications such as electric vehicles (EVs) and solar power. “

Professor Afridi holds several diplomas, including a doctorate in electrical engineering and computer science from MIT. He was previously COO and CTO of Techlogix and worked for JPL, Lutron, Philips and Schlumberger. He is associate editor of the IEEE Journal of Emerging and Selected Topics in Power Electronics. He has received numerous awards for his work, most recently the National Science Foundation CAREER Award 2016 from the NSF.

Besides Professor Afridi, Odyssey has a solid first semester. The company announced in April that it had raised $ 5 million (1.25 million shares at $ 4.00 per share) in a private placement of common shares to further fund development and production of high voltage vertical conduction GaN power switching devices. Odyssey has developed new GaN processing technology to produce high voltage power switching devices that will break down long standing performance barriers for high power and high voltage applications such as electric vehicles, solar power, power grids and industrial engines.

In 2020, Odyssey began trading on the OTCQB Venture marketplace (the “OTCQB”) under the symbol ODII and is focused on the high end power switching device market. The high-end power switching device market, which is described as applications in which silicon-based systems perform insufficiently, is expected to reach over $ 3.5 billion by 2025.

About Odyssey Semiconductor Technologies, Inc. (OTCQB: ODII)

Odyssey Semiconductor Technologies, Inc. (www.odysseysemi.com), has developed a proprietary technology that will allow gallium nitride (GaN) to replace silicon carbide (SiC) as the main high voltage power switching semiconductor material. Situated at Ithaca, New York State, the company owns and operates a 10,000 sq.ft. Semiconductor wafer manufacturing facility with a mix of Class 1000 and Class 10,000 clean space as well as tools for advanced semiconductor development and production. Odyssey Semiconductor also provides a world-class semiconductor development and foundry service.

Forward-looking statements
Statements in this press release that are not descriptions of historical fact are forward-looking statements within the meaning of the safe harbor provisions of the Private Securities Litigation Reform Act of 1995. These forward-looking statements include, without limitation, statements regarding our plans, objectives, representations and claims and are not historical facts and are generally identified by the use of terms such as “may”, “will”, “should”, “could”, “expect” to “,” plan “,” anticipate, “” believe “,” estimate “,” predict “,” potential “,” continue “and similar words, although certain forward-looking statements are expressed differently. These forward-looking statements are based on management’s current expectations and assumptions and are subject to risks and uncertainties. Factors that could cause actual results to differ materially from those currently expected include, but are not limited to, risks relating to the results of our research and development activities, including uncertainties related to semiconductor manufacturing. ; the initial stage of our GaN-based technology currently under development; our ability to protect our intellectual property rights that are valuable to our business, including patents and other intellectual property rights; our ability to successfully market and sell our technologies; the ability to achieve high manufacturing volumes and the size and growth of potential markets for any of our technologies, the rate and degree of market acceptance of any of our technologies and our ability to raise funds to support operations and the continued development and qualification of our technology.

In light of these risks, uncertainties and assumptions, forward-looking statements regarding future events and circumstances discussed in this press release may not occur, and actual results could differ materially and adversely from those anticipated or implied in the forward-looking statements. . You should not rely on forward-looking statements as predictions of future events. The forward-looking statements included herein speak only as of the date hereof, and we assume no obligation to publicly or privately update any forward-looking statements for any reason after the date of this release in order to conform these statements to actual results or to changes in our expectations.

Company details :
Phone. : + 1-607-882-2754
[email protected]

Media contact:
Brad hem
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SOURCE Odyssey Semiconductor